Enhanced dielectric and piezoelectric properties of manganese-doped Pb(In<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>-Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-PbTiO<sub>3</sub> single crystals by alternating current poling
نویسندگان
چکیده
Alternating current poling (ACP) was performed on Gen III relaxor-PT Mn-doped Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (Mn: PIN-PMN-PT) single crystals with the direction of [001]. Experimental results proved that ACP could bring property enhancement to both k31 and k33 mode crystals. Compared those from traditional direct (DCP), optimized conditions (20 kV/cm, 0.1 Hz, 20 cycles) enhanced dielectric piezoelectric properties k31-mode by more than 30%, where free constant coefficient d33 reached 5300 1750 pC/N, respectively. Furthermore, replacing DCP increase advantages relaxor-PT. The coupling factors were 0.472 0.915, mechanical quality factor Qm 17%, depoling temperature raised 17 °C 123 °C. In following mechanism study, in situ x-ray diffraction (XRD) combined temperature-dependent measurement introduction monoclinic phases after ACP, while piezoresponse force microscopy (PFM) observation showed “2R”-like “2M” domain morphologies Both these intrinsic extrinsic are believed be keys mechanisms behind ACP. This study is an effective method suitable for will promote its applications high-temperature high-power devices.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2021
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0038207